A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS

We have investigated and developed a method for the LPE growth of laye rs with approximately parabolic cross section. The channels were creat ed during the growth process by modulating the liquid phase thickness with W or Mo wires parallel to the substrate. The main parameters of t he channel can be controlled by changing the wire's diameter and its d istance from the substrate. This method can be incorporated directly i nto the growth process of a laser structure with an unstable resonator without the need of additional treatments as chemical etching, to pro duce the channel structure.