DESIGN AND OPTIMIZATION OF VERY HIGH-POWER DENSITY MONOCHROMATIC GAASPHOTOVOLTAIC CELLS

This paper deals with the structure optimization of very high power de nsity monochromatic GaAs photovoltaic cells and the theoretical predic tion of their performance at irradiances ranging from 0.1 to 100 W/cm( 2). A multifaceted optimum design including the front metal grid, devi ce size and the semiconductor layer structure is presented. The variat ion in efficiency depending an emitter thickness, base thickness, emit ter doping and base doping is also addressed. The objective of this be ing the configuration of a structure suitable for working up to 100 W/ cm(2) without the detrimental influence of series resistance. For this , a detailed analysis of the effect of series resistance and the quant itative determination of its different components is carried out. The optimum wavelength is 830 nm at 300 K for ail the analyzed light inten sities, in which a 63% peak efficiency under an irradiance of 100 W/cm (2) for a p/n structure is obtained. The temperature effect on device performance in the 273-350 K range is also studied. Finally, the influ ence of device processing is analyzed.