A NOVEL THIN-FILM-TRANSISTOR USING DOUBLE AMORPHOUS-SILICON ACTIVE LAYER

Authors
CHOI JH KIM CS LIM BC JANG J
Citation
Jh. Choi et al., A NOVEL THIN-FILM-TRANSISTOR USING DOUBLE AMORPHOUS-SILICON ACTIVE LAYER, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2074-2076
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
9
Year of publication
1998
Pages
2074 - 2076
Database
ISI
SICI code
0018-9383(1998)45:9<2074:ANTUDA>2.0.ZU;2-M
Abstract
We have fabricated a novel low off-state leakage current thin-film tra nsistor (TFT) using a chlorine incorporated amorphous silicon [a-Si:H( : CI)] and amorphous silicon (a-Si:H) stacked active layer, in which c onduction channel is formed in a-Si:H and a-Si:H(:Cl) is photo-insensi tive material. The off-state photo-leakage current of the a-Si:H(: Cl) /a-Si:H TFT is much lower than that a conventional a-Si:H TFT.