A HIGH-PERFORMANCE SOI DRIVE-IN GATE CONTROLLED HYBRID TRANSISTOR (DGCHT)

Authors
HUANG R ZHANG X WANG YY
Citation
R. Huang et al., A HIGH-PERFORMANCE SOI DRIVE-IN GATE CONTROLLED HYBRID TRANSISTOR (DGCHT), I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2079-2081
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
9
Year of publication
1998
Pages
2079 - 2081
Database
ISI
SICI code
0018-9383(1998)45:9<2079:AHSDGC>2.0.ZU;2-4
Abstract
A novel SOI drive-in gate controlled hybrid transistor is put forward in this paper. Compared with previous hybrid transistors, with the for mer advantages retained, drive-in gate controlled hybrid transistor (D GCHT) can obtain short channel without any submicron technology. And t he Early voltage con be increased in spite of the depleted base surfac e. The breakdown characteristics can be improved in spite of the short er channel length and the high current gain.