EFFECT OF INDIUM SURFACE SEGREGATION ON EXCITONIC PROPERTIES IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/

Authors
BALLET P DISSEIX P LEYMARIE J VASSON A VASSON AM GREY R
Citation
P. Ballet et al., EFFECT OF INDIUM SURFACE SEGREGATION ON EXCITONIC PROPERTIES IN (111)B-GROWN (IN,GA)AS GAAS MULTIPLE-QUANTUM WELLS/, Microelectronic engineering, 43-4, 1998, pp. 205-212
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
205 - 212
Database
ISI
SICI code
0167-9317(1998)43-4:<205:EOISSO>2.0.ZU;2-3
Abstract
Two (111)B In0.15Ga0.85As/GaAs multiple quantum well p-i-n diodes, gro wn by molecular beam epitaxy, are investigated by thermally-detected o ptical absorption and electroreflectance. The excitonic properties are calculated by taking into account the contribution of indium segregat ion. An equilibrium model is used to provide the composition profiles. It is shown that indium segregation influences the piezoelectric fiel d determination and the oscillator strengths of the excitonic transiti ons. (C) 1998 Elsevier Science B.V. All rights reserved.