INFLUENCE OF THIN ALAS INTERFACE LAYERS ON EXCITON-TRANSITIONS IN INGAAS GAAS QUANTUM-WELLS/

Authors
LEE KS LEE EH LEE CD NOH SK KIM YM
Citation
Ks. Lee et al., INFLUENCE OF THIN ALAS INTERFACE LAYERS ON EXCITON-TRANSITIONS IN INGAAS GAAS QUANTUM-WELLS/, Microelectronic engineering, 43-4, 1998, pp. 237-242
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
237 - 242
Database
ISI
SICI code
0167-9317(1998)43-4:<237:IOTAIL>2.0.ZU;2-D
Abstract
We have optically determined carrier effective masses for a series of InGaAs/GaAs quantum wells with 0 or 2 monolayer ALAs sandwiched betwee n InGaAs and GaAs. Photoluminescence investigations of exciton ground state were carried in the presence of a magnetic field up to 50 T. The reduced mass of heavy-hole exciton was determined by theoretical fits to its diamagnetic shifts. The heavy-hole in-plane mass increased whe n ultra-thin AlAs layers were inserted at the both interfaces of a qua ntum well. (C) 1998 Elsevier Science B.V. All rights reserved.