CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS

Authors
KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEMIN AV
Citation
Va. Kulbachinskii et al., CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS, Microelectronic engineering, 43-4, 1998, pp. 319-324
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
319 - 324
Database
ISI
SICI code
0167-9317(1998)43-4:<319:CWEIAI>2.0.ZU;2-6
Abstract
A method of fabricating quasi-1D conducting wires of tin embedded in a n i-GaAs matrix has been developed. The method involves forming a syst em of steps on vicinal surface of the GaAs(Cr) substrate misoriented 0 .3 degrees or 1 degrees from the (001) plane forward to the (110) basa l plane and decorating the ends of these steps with Sn through molecul ar-beam epitaxy. Transport properties of structures were measured in t he temperature range 4.2-300 K at high electric fields up to E = 10(4) V/cm using a pulse technique. (C) 1998 Elsevier Science B.V; All righ ts reserved.