An. Korshak et al., EFFECT OF P(-CONTACT PARAMETERS ON SUBTERAHERTZ AND TERAHERTZ BALLISTIC CURRENT OSCILLATIONS FOR QUANTIZED HOLES WITH NEGATIVE EFFECTIVE MASSES()), Microelectronic engineering, 43-4, 1998, pp. 445-451
A space-charge limited ballistic current of quantized holes in a short
doped p-GaAs quantum well generates current oscillations. This genera
tion is a result of a negative effective mass region in the hole dispe
rsion relation. An oscillation frequency depends on the parameters of
the diode structure with quantum well as a base, and is in subterahert
z and terahertz ranges. It is determined by a longitudinal mode of a s
elftuning plasma cavity in the diode base which depends on a Fermi ene
rgy of holes emitted by the pc-anode and cathode into the base. The be
st oscillation generation regime is achieved at some optimum value of
the Fermi energy. (C) 1998 Elsevier Science B.V. All rights reserved.