EFFECT OF P(-CONTACT PARAMETERS ON SUBTERAHERTZ AND TERAHERTZ BALLISTIC CURRENT OSCILLATIONS FOR QUANTIZED HOLES WITH NEGATIVE EFFECTIVE MASSES())

Citation
An. Korshak et al., EFFECT OF P(-CONTACT PARAMETERS ON SUBTERAHERTZ AND TERAHERTZ BALLISTIC CURRENT OSCILLATIONS FOR QUANTIZED HOLES WITH NEGATIVE EFFECTIVE MASSES()), Microelectronic engineering, 43-4, 1998, pp. 445-451
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
445 - 451
Database
ISI
SICI code
0167-9317(1998)43-4:<445:EOPPOS>2.0.ZU;2-K
Abstract
A space-charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This genera tion is a result of a negative effective mass region in the hole dispe rsion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahert z and terahertz ranges. It is determined by a longitudinal mode of a s elftuning plasma cavity in the diode base which depends on a Fermi ene rgy of holes emitted by the pc-anode and cathode into the base. The be st oscillation generation regime is achieved at some optimum value of the Fermi energy. (C) 1998 Elsevier Science B.V. All rights reserved.