HOLE BAND-STRUCTURE OF P-TYPE DELTA-DOPING QUANTUM-WELLS IN SILICON

The subband structure of p-type delta-doping wells in Si is calculated within self-consistent six-component envelope function theory, taking the heavy hole, Light hole and spin-orbit split bulk bands into accou nt. The subband dispersion shows a pronounced anticrossing behavior, b eing enhanced by the small splitting between heavy and light hole leve ls and the strong subband anisotropy parallel to the doping layers. Fo r sheet doping concentrations above 10(13) cm(-2), subbands derived fr om the spin-orbit split band compete with heavy and light hole subband s. A comparison with experimental results shows good agreement. (C) 19 98 Elsevier Science B.V. All rights reserved.