HYDRODYNAMIC MODEL OF THIN-FILM DEPOSITION

The deposition rate of the films by chemical vapor deposition was calc ulated using a model that is simpler than previous models. Conservatio n of mass, momentum and the energy equation were solved numerically fo r two and three dimensional flow around the substrates. It was shown t hat the vorticity gradient distributions on the substrates calculated from the velocity distribution are qualitatively in good agreement wit h those of the experimental deposition rate of the SiN films on the Si substrate for two dimensional flow. For the calculated three dimensio nal flow around the rectangular substrates set up in the circular cyli nder, recirculation perpendicular to the flow direction which is consi dered to have an influence on the deposition rate of the films was obs erved around the substrate. (C) 1998 Elsevier Science B.V. All rights reserved.