PHOTOACOUSTIC SPECTRA OF ZINC SELENIDE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
YOSHINO K NAKAGAWA Y FUKUYAMA A MAEDA K YONETA M OHISHI M SAITO H IKARI T
Citation
K. Yoshino et al., PHOTOACOUSTIC SPECTRA OF ZINC SELENIDE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 689-693
Citations number
10
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
689 - 693
Database
ISI
SICI code
0167-9317(1998)43-4:<689:PSOZST>2.0.ZU;2-H
Abstract
Piezoelectric photoacoustic (PPA) measurements of nondoped ZnSe epitax ial layers grown by molecular beam epitaxy (MBE) are carried out at ro om temperature. A distinct peak due to the bandgap of ZnSe and substra te GaAs is clearly observed. The deep level with activation energy of about 0.65 eV is not successfully resolved from,the nonradiative elect ron transition point of view. The PPA signals of nondoped ZnSe/GaAs th in film grown by MBE are successfully observed for the first time. (C) 1998 Elsevier Science B.V. All rights reserved.