LOCAL STRUCTURES AROUND ER ATOMS DOPED IN INP REVEALED BY FLUORESCENCE EXAFS

We have investigated OMVPE-grown InP doped with Er by fluorescence EXA FS (extended X-ray absorption fine structure) in order to study the lo cal structures around Er atoms, so as to understand the luminescence p roperty of Er atoms in semiconductors. The EXAFS analysis revealed tha t the Er atoms substituted into the In-site of InP, in the samples gro wn below 550 degrees C, which exhibited high efficiency of luminescenc e, while the Er atoms constructed the NaC1-structure ErP, in the sampl es grown above 580 degrees C, which exhibited low efficiency of lumine scence. (C) 1998 Elsevier Science B.V. All rights reserved.