OPTICAL-ABSORPTION OF AMORPHOUS-SEMICONDUCTORS GE20AS30SE50-XTEX AND THE EFFECT OF GAMMA-IRRADIATION

Authors
MAGED AF MONTASSER KI AMER HH
Citation
Af. Maged et al., OPTICAL-ABSORPTION OF AMORPHOUS-SEMICONDUCTORS GE20AS30SE50-XTEX AND THE EFFECT OF GAMMA-IRRADIATION, Materials chemistry and physics, 56(2), 1998, pp. 184-188
Citations number
17
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
56
Issue
2
Year of publication
1998
Pages
184 - 188
Database
ISI
SICI code
0254-0584(1998)56:2<184:OOAGAT>2.0.ZU;2-F
Abstract
The Ge-As-Se system has been selected as the basic glass system for st udying the effects of addition of tellurium on transition temperature, density, molar volume and optical properties. The effect of gamma-irr adiation on IR transmission for the systems x = 0 and x = 40 has been studied. Oxygen impurities, which are increased after gamma-irradiatio n, produce an absorption between 12 and 16 mu m due to Ge-O, AsO and S e-O. (C) 1998 Elsevier Science S.A. All rights reserved.