ALAS GAAS SCHOTTKY-COLLECTOR RESONANT-TUNNEL-DIODES/

The Schottky-collector resonant-tunnel-diode (SRTD) is an resonant-tun nel-diode with the normal N+ collector layer and ohmic contact replace d by direct Schottky contact to the space-charge layer, thereby elimin ating the associated parasitic series resistance R(s). By scaling the Schottky collector contact to submicron dimensions, the device periphe ry-to-area ratio is increased, decreasing the periphery-dependent comp onents of the parasitic resistance, and substantially increasing the d evice's maximum frequency of oscillation. We report measured d.c. and microwave parameters of planar SRTDs fabricated with lum-geometries in AlAs/GaAs.