MOSFET EFFECTIVE CHANNEL WIDTH DETERMINATION BY NONLINEAR OPTIMIZATION

Accurate determination of MOSFET effective channel width W(eff) is imp ortant for process control and device design. Existing methods to dete rmine W(eff) are sensitive to measurement noise, and to nonlinearities in the data. In this paper we present a new method to determine W(eff ) that overcomes these problems, The method uses nonlinear optimizatio n, and is based on a drain current model that accounts for the variati ons of W(eff), of series resistance, and of threshold voltage, with ma sked channel width and gate bias. We also show that our new method is more accurate and less sensitive to measurement procedure than other m ethods.