THIN OXIDE GROWN ON HEAVILY CHANNEL-IMPLANTED SUBSTRATE BY USING A LOW-TEMPERATURE WAFER LOADING AND N2 PRE-ANNEALING PROCESS

In this paper, we present high integrity thin oxides grown on the chan nel implanted substrate (greater-than-or-equal-to 3 x 10(17) cm-3) and heavily doped substrate (greater-than-or-equal-to 1 x 10(20) cm-3) by using a low-temperature wafer loading and N2 pre-annealing process. T he presented thin oxide grown on the channel implanted substrate exhib its a very low interface state density (less-than-or-equal-to 1 x 10(1 0) cm-2 eV-1) and a very high intrinsic dielectric breakdown field (gr eater-than-or-equal-to 15 MV/cm). It also shows a lower charge trappin g rate and interface state generation rate than the conventional therm al oxide. For the thin oxide grown on the heavily-doped substrate by u sing the proposed recipe, the implantation-induced damage close to the silicon surface can be almost annealed out. The presented heavily-dop ed oxide shows much better dielectric characteristics, such as the die lectric breakdown field and the charge-to-breakdown, as compared to th e conventional heavily-doped oxide.