LOW-TEMPERATURE IMPURITY DIFFUSION IN SIC - PLANAR QUANTUM-SIZE P-N-JUNCTIONS AND N-P-N TRANSISTOR STRUCTURES

Low temperature diffusion of boron and phosphorus has been realized fo r the first time in monocrystalline SiC through controlled surface inj ection of silicon vacancies. By varying the parameters of the surface oxide overlayer during the boron/phosphorus diffusion process, it was possible to obtain the SiC planar quantum-size p-n junctions and trans istor structures featuring low values for dark leakage currents. Use o f the SiC quantum-size transistor structures in both bipolar and FET v ariations has been found to result in the generation of the negative r esistance due to avalanche current processes.