MODELING THE EFFECT OF BACK GATE BIAS ON THE SUBTHRESHOLD BEHAVIOR OFA SIGE-CHANNEL SOI PMOS DEVICE

Authors
KUO JB TANG MC SIM JH
Citation
Jb. Kuo et al., MODELING THE EFFECT OF BACK GATE BIAS ON THE SUBTHRESHOLD BEHAVIOR OFA SIGE-CHANNEL SOI PMOS DEVICE, Solid-state electronics, 36(12), 1993, pp. 1757-1761
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
12
Year of publication
1993
Pages
1757 - 1761
Database
ISI
SICI code
0038-1101(1993)36:12<1757:MTEOBG>2.0.ZU;2-A
Abstract
This paper reports on a simulation study on the back gate bias effect on the subthreshold behavior of a SiGe-channel SOI PMOS device using a device simulator. With a SiGe channel, the SOI PMOS device shows a sm aller back gate bias effect as compared to the one without it.