DEMONSTRATION OF A SI SIGE OPTOELECTRONIC RESET SET FLIP-FLOP BASED ON AN INVERSION-CHANNEL HETEROSTRUCTURE/

For the first time, the integration of Si/SiGe heterojunction field ef fect transistors (HFET), and a three-terminal, double-heterostructure, optoelectronic switch (DOES), in functional circuit is demonstrated. What is unique about this integration is that the layer growth and fab rication processes are identical for both types of devices, which simp lifies the integration process. To illustrate the compatibility of the devices, HFETs and DOES devices fabricated on the same wafer are used to demonstrate an electrical/optical reset-set flip-flop. Issues rela ted to the integration of inversion-channel devices are discussed.