REDUCED HOT-CARRIER RELIABILITY DEGRADATION OF X-RAY-IRRADIATED MOSFETS IN A 0.25 MU-M CMOS TECHNOLOGY WITH ULTRA-THIN GATE OXIDE

Authors
ACOVIC A HSU CCH HSIA LC AITKEN JM
Citation
A. Acovic et al., REDUCED HOT-CARRIER RELIABILITY DEGRADATION OF X-RAY-IRRADIATED MOSFETS IN A 0.25 MU-M CMOS TECHNOLOGY WITH ULTRA-THIN GATE OXIDE, Solid-state electronics, 36(9), 1993, pp. 1353-1355
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
9
Year of publication
1993
Pages
1353 - 1355
Database
ISI
SICI code
0038-1101(1993)36:9<1353:RHRDOX>2.0.ZU;2-S