IMPROVEMENT OF QUALITY OF CD1-XMNXTE CRYSTALS BY SPECIAL ANNEALING

Citation
Av. Savitsky et al., IMPROVEMENT OF QUALITY OF CD1-XMNXTE CRYSTALS BY SPECIAL ANNEALING, Journal of crystal growth, 192(1-2), 1998, pp. 196-199
Citations number
8
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
192
Issue
1-2
Year of publication
1998
Pages
196 - 199
Database
ISI
SICI code
0022-0248(1998)192:1-2<196:IOQOCC>2.0.ZU;2-B
Abstract
Electrical, magnetic and optical properties of Cd1 - xMnxTe (0.1 less than or equal to x less than or equal to 0.45) single crystals grown b y the Bridgman technique and annealed under various conditions were in vestigated. The nonstabilities of electrical properties of as-grown si ngle crystals were revealed, caused by intrinsic (V-Cd', V-Cd'' and ex trinsic defects which were able to create low-binding-energy complexes . Heat treatment followed by slow cooling to 723 K (v = 1 K/h) under c onditions preventing sample evaporation stabilizes the electrical prop erties of the material. (C) 1998 Elsevier Science B.V. All rights rese rved.