FIELD EMITTER ARRAY MASK PATTERNING USING LASER INTERFERENCE LITHOGRAPHY

We have fabricated uniform arrays of 120-nm-diam dot masks on 300 nm c enters using laser interference lithography. Chrome, cobalt, nickel, a nd germanium dot arrays have been fabricated. The density of these arr ays is >10(9) dots/cm(2). The standard deviation of the average dot di ameter is 7.4% over a 5-cm-diam silicon substrate. The center-to-cente r spacing of the dot mask is determined by the laser wavelength and in terference angle. Some control over the dot diameter is possible by va rying the angle of the substrate during the metal deposition prior to liftoff. We have used a reactive ion etch with these metal dot masks t o form single crystal silicon pedestals demonstrating that these struc tures are suitable for self-aligned gated held emitter array fabricati on. (C) 1995 American Vacuum Society.