CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION FOR MICROELECTRONICS

The charging effects of plasma immersion ion implantation (Pm) doping experiments have been investigated using a dynamic sheath model and PD P1 plasma simulation code. When the target has a dielectric film, char ge accumulation during Pm can have a profound impact on doping results . Under certain process conditions, it can significantly reduce implan t energy and dose and thereby alter the implant profile. In addition, it may degrade device reliability, especially for ultralarge-scale int egrated circuit devices. In order to minimize charging effects, shorte r pulse widths along with moderate values of plasma density and pulse potential should be used. (C) 1995 American Vacuum Society.