METAL-INSULATOR-METAL CAPACITORS BY USING ELECTRON-CYCLOTRON-RESONANCE PLASMA-SIO2

This paper describes the fabrication process and the reliable characte ristics of a metal-insulator-metal capacitor using electron cyclotron resonance plasma-SiO2 as an insulator film. The metal-insulator-metal capacitors are additionally fabricated during the Al multilevel interc onnection process since the deposition temperature of electron cyclotr on resonance plasma-SiO2 is below 200 degrees C. Also, the leakage cur rent characteristics of the him are excellent even without densificati on at high temperature. The experimental results confirm that a metal- insulator-metal capacitor fabrication process using electron cyclotron resonance plasma-SiO2 can be applied to analog large scale integratio n implementation. (C) 1995 American Vacuum Society.