MECHANISMS OF FERMI-LEVEL PINNING IN SCHOTTKY BARRIERS ON INGAASSB AND ALGAASSB

Authors
POLYAKOV AY MILNES AG SMIRNOV NB DRUZHININA LV TUNITSKAYA IV
Citation
Ay. Polyakov et al., MECHANISMS OF FERMI-LEVEL PINNING IN SCHOTTKY BARRIERS ON INGAASSB AND ALGAASSB, Solid-state electronics, 36(10), 1993, pp. 1371-1373
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
10
Year of publication
1993
Pages
1371 - 1373
Database
ISI
SICI code
0038-1101(1993)36:10<1371:MOFPIS>2.0.ZU;2-P
Abstract
Schottky barrier heights were measured for Al, Au and Sb on n-InxGa1-x AsySb1-y (x = 0. 15) lattice matched to GaSb. In all three cases the b arrier heights are close to 0.5 eV, with the Fermi level at the surfac e pinned at E(v) + 0.16 eV. A comparison is drawn with GaSb and AlGaAs Sb and the mechanism of pinning is discussed. In particular the differ ence in behavior upon Sb deposition is noted and explained by the diff erences in defect structure of InGaAsSb and GaSb and AlGaAsSb.