A UNIFIED WIDE TEMPERATURE-RANGE MODEL FOR THE ENERGY-GAP, THE EFFECTIVE CARRIER MASS AND INTRINSIC CONCENTRATION IN SILICON

In this paper a new model for the intrinsic concentration in silicon i s derived. It uses new wide temperature range models for the effective electron and hole masses which are based on fundamental computations found in literature. Furthermore the available models for the energy g ap are reviewed. The intrinsic concentration is then computed out of t hese models and compared with measured data. It is shown that the mode l is in very close agreement with these data. The three models provide a unified consistent way for computing these physical values in devic e simulation.