A CONSISTENT EXPERIMENTAL-METHOD FOR THE EXTRACTION OF THE THRESHOLD VOLTAGE OF SOI NMOSFETS FROM ROOM DOWN TO CRYOGENIC TEMPERATURES

Authors
ROTONDARO ALP MAGNUSSON U SIMOEN E CLAEYS C
Citation
Alp. Rotondaro et al., A CONSISTENT EXPERIMENTAL-METHOD FOR THE EXTRACTION OF THE THRESHOLD VOLTAGE OF SOI NMOSFETS FROM ROOM DOWN TO CRYOGENIC TEMPERATURES, Solid-state electronics, 36(10), 1993, pp. 1465-1468
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
10
Year of publication
1993
Pages
1465 - 1468
Database
ISI
SICI code
0038-1101(1993)36:10<1465:ACEFTE>2.0.ZU;2-M
Abstract
A procedure for extracting the threshold voltage of SOI nMOSFETs is de rived and experimentally validated for operation from room down to liq uid helium temperature. This procedure provides a unique method for ev aluating the threshold voltage of accumulation and enhancement mode SO I MOSFETs operating at low temperatures.