G. Cicala et al., PLASMA DEPOSITION CHEMISTRY OF AMORPHOUS SILICON-CARBON ALLOYS FROM FLUORINATED GAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2762-2767
Citations number
30
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Hydrofluorinated amorphous silicon-carbon alloys (a-Si1-xCx:H,F) are o
btained by plasma decomposition of SiF4-CH4-H-2 mixtures. The analysis
of the plasma phase, by mass spectrometry and optical emission spectr
oscopy, and of the resultant material, by Fourier transform infrared s
pectroscopy and x-ray photoelectron spectroscopy, allows us to gain in
formation about the film growth chemistry. The growth kinetics and the
material composition of the a-Si1-xCx:H,F films are studied as a func
tion of the added CH4 amount to the SiF4. The peculiarity of SiF4-CH4
system is that small CH4 addition (10%) to SiF4 produces silicon carbo
n alloys with high C incorporation (60 at. %). This has been explained
on the basis of a growth model in which the chemisorption of CHn on t
he surface prevails on that of SiFn. (C) 1998 American Vacuum Society.
[S0734-2101(98)03705-1].