PREPARATION OF HIGH-QUALITY RUO2 ELECTRODES FOR HIGH DIELECTRIC THIN-FILMS BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Pure and conducting RuO2 thin films were deposited on a Si substrate a t 250-450 degrees C using Ru(C11H19O2)(3) as a precursor by low pressu re metal organic chemical vapor deposition (MOCVD). Ar a lower deposit ion temperature, the smoother and denser RuO2 thin films were deposite d. The amount of O-2 addition did not seriously affect the properties of the RuO2 thin film. The RuO2 thin films which were crack free and w ell adhered onto the substrates showed very low resistivity of 45-60 m u Omega cm. At a lower deposition temperature and a smaller amount of O-2 addition, RuO2 thin films showed better step coverage, indicating that MOCVD RuO2 thin films from Ru(C11H19O2)(3) can be applied for an electrode of high dielectric thin films fur a capacitor of ultralarge scale integrated dynamic random access memory. (C) 1998 American Vacuu m Society. [S0734-2101(98)05205-1].