A. Tempez et al., SURFACE-COMPOSITION OF BN, CN, AND BCN THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2896-2900
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Boron nitride (BN), carbon nitride (CN), and boron carbon nitride (BCN
) thin films were deposited on sapphire and silicon using ion beam and
electron cyclotron resonance plasma assisted physical vapor depositio
n. In situ Auger electron spectroscopy was used to investigate the eff
ect of different growth parameters and postgrowth processing on the th
in film surface composition. The bulk composition was determined by el
ectron energy loss spectroscopy and electron microprobe analysis. Both
BN and CN films show thermal stability up to 900 and 700 degrees C, r
espectively. Low growth temperatures favor nitrogen incorporation in C
N films and the optimum temperature for quasistoichiometric BN is betw
een 450 and 600 degrees C, depending on the nitrogen sources. (C) 1998
American Vacuum Society. [S0734-2101 (98)05805-9].