SURFACTANT AND ORDERING EFFECTS OF ARSENIC INTERLAYERS AT THE PB INP(110) INTERFACE/

(Soft) x-ray photoelectron spectroscopy and x-ray photoelectron diffra ction (XPD) were used to investigate interface reaction: him morpholog y and surface order at both the Pb/InP(110) interface and the correspo nding Interface including an arsenic interlayer. The core level spectr a did only reveal very weak, interface reaction, which could be suppre ssed by arsenic. Growth of three dimensional islands of metallic lead was observed on the Pb/InP(110) interface. Lead deposition onto an ord ered arsenic monolayer on InP(110) was accompanied by segregation of a pproximately half. the arsenic. The growth mode of the lead film chang ed dramatically from three-dimensional island growth to a layer-by-lay er-like mode due to the surfactant arsenic. XPD patterns provided evid ence of ordered lead growth on the original system while the arsenic i nduced smooth Pb films show strong disorder. (C) 1998 American Vacuum Society. [S0734-2101 (98)02805-X].