DIFFUSION BEHAVIOR STUDY OF YB+ AND ER+ IMPLANTED INTO POLYIMIDE (C22H10N2O5)(N)

Polyimide (C22H10N2O5)(n) films were irradiated at room temperature by 200, and 300 keV Yb+ and 400 keV Er+. The dose was 1 x 10(15) ions/cm (2). The Rutherford backscattering technique has been used to study th e diffusion behavior and the depth distribution of implanted Yb+ and E r+ in polyimide (C22H10N2O5)n The results show that (1) for the sample annealed at lower temperature, the migration of Yb+ and Er+ into the overlying polyimide is faster than into the undamaged polyimide, but t here is a significant non-Fickian tail extending deep into the undamag ed polyimide film, (2) oxygen loss was observed, and (3) the depth dis tributions of ''as implanted'' Yb+ and Er+ were nearly Gaussian in all cases. The x-ray photoelectron spectroscopy was used to study the str uctural modification. After ion implantation, the binding energy of ca rbon 1s, nitrogen 1s and oxygen 1s in polyimide was decreased. (C) 199 8 American Vacuum Society. [S0734-2101(98)00205-X].