LATTICE-PARAMETER OF ZNSE CRYSTALS GROWN FROM MELT UNDER ZN PARTIAL-PRESSURE

Authors
UDONO H KIKUMA I OKADA Y
Citation
H. Udono et al., LATTICE-PARAMETER OF ZNSE CRYSTALS GROWN FROM MELT UNDER ZN PARTIAL-PRESSURE, Journal of crystal growth, 193(1-2), 1998, pp. 39-42
Citations number
15
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
193
Issue
1-2
Year of publication
1998
Pages
39 - 42
Database
ISI
SICI code
0022-0248(1998)193:1-2<39:LOZCGF>2.0.ZU;2-V
Abstract
Dependence of the lattice parameter of melt-grown ZnSe on Zn partial p ressure have been measured by the Bond method. The lattice parameters changed between 0.566902 and 0.566908 nm depending on the partial pres sure of Zn during growth. The minimum lattice parameter was observed a t the Zn reservoir temperature of 1000 degrees C, where the melt compo sition was near stoichiometry. (C) 1998 Elsevier Science B.V. All righ ts reserved.