INVESTIGATION OF DOMAIN EVOLUTION IN SUBLIMATION EPITAXY OF SIC

Authors
TUOMINEN M YAKIMOVA R KAKANAKOVAGEORGIEVA A MACMILLAN MF SYVAJARVI M JANZEN E
Citation
M. Tuominen et al., INVESTIGATION OF DOMAIN EVOLUTION IN SUBLIMATION EPITAXY OF SIC, Journal of crystal growth, 193(1-2), 1998, pp. 101-108
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
193
Issue
1-2
Year of publication
1998
Pages
101 - 108
Database
ISI
SICI code
0022-0248(1998)193:1-2<101:IODEIS>2.0.ZU;2-V
Abstract
High resolution X-ray diffractometry has been applied to study domain misorientation in SiC epi-layers grown by the sublimation epitaxy meth od. A pronounced effect of the growth conditions on the mosaicity of t he epi-layer has been observed. The results are discussed in terms of domain evolution and structural changes during the epi-growth under di fferent growth conditions. (C) 1998 Elsevier Science B.V. All rights r eserved.