Mb. Naik et al., THERMAL CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM HEXAFLUOROACETYLACETONATE CU(I) VINYLTRIMETHYLSILANE - KINETIC-STUDIES, Journal of crystal growth, 193(1-2), 1998, pp. 133-147
The role of hydrogen in the chemical vapor deposition of copper from h
exafluoroacetylacetonate Cu(I) vinyltrimethylsilane was investigated b
y depositing copper using pure hydrogen, pure helium or mixtures of th
ese gases at substrate temperatures between 130 and 180 degrees C, pre
cursor partial pressures between 1.0 and 6.0 mTorr at 250 mTorr total
pressure in a vertical how stagnation point cold-wall reactor. The act
ivation energy for copper growth from (hfac)Cu(vtms) using either hydr
ogen or helium was comparable (4000-6000 cal/mol). The him composition
was independent of the type of diluent or carrier gas and the film re
sistivity of the data used was routinely near 2.2 mu Omega cm for thic
k films (> 5000 Angstrom). Film growth rates between 60 and 360 Angstr
om/min were obtained with no significant correlation with the type of
carrier/diluent gas used. Approximate first-order dependence of copper
growth rate on precursor concentration was observed. The observed zer
o-order dependence of growth rate on hydrogen concentration suggests a
chemically inactive role for hydrogen in copper deposition. Fundament
al surface reaction mechanisms consistent with our experimental observ
ations are proposed. (C) 1998 Elsevier Science B.V. All rights reserve
d.