LIQUID-PHASE EPITAXIAL-GROWTH OF GAP LAYERS ON TEXTURED GAP(111)B SUBSTRATES

Liquid phase epitaxial (LPE) growth of GaP layers was carried out on p yramidal textured GaP (1 1 1)B substrates prepared using photolithogra phic masking followed by wet chemical etching. High quality LPE layers with both pyramidal textured p-n junction interfaces and hat surfaces were realized. LPE growth evolution studies revealed that in the earl y stage of growth growth mainly occurred on the base floor and the sid e walls of the pyramids, with hardly any deposition on the top surface s of pyramids. The valleys between the pyramids were gradually filled, resulting in hat layer surfaces after an appropriate growth time. Fie ld emission scanning electron microscopy analysis on cleaved cross-sec tions showed sharp textured p-n junction interfaces with periodically arranged pyramidal textured features, and no structural defects were o bservable. I-V characteristics of the GaP p-n junction diodes confirme d that LPE growth on textured substrates did not introduce defect stat es, which may degrade device performance. (C) 1998 Elsevier Science B. V. All rights reserved.