EPITAXIAL-GROWTH SIMULATIONS OF CDTE(111)B ON SI(001)

The epitaxial growth of CdTe on Si(0 0 1) substrates is simulated empl oying molecular dynamics and a hybrid approach combining molecular dyn amics and Molte Carlo methods. Empirical Rockett potentials are employ ed to describe interatomic interactions. The simulations predict that the epilayer growth direction is the (1 1 1)direction under experiment ally determined optimum growth conditions. The influence of substrate miscut angle is examined by the consideration of single and double mon olayer steps on the substrate surface. (C) 1998 Published by Elsevier Science B.V. All rights reserved.