2-PHASE LIQUID-PHASE EPITAXY OF IN0.53GA0.47AS ON INP

The growth of the In0.53Ga0.47As epilayer on InP by two-phase liquid p hase epitaxy is investigated. To saturate the In melt before growth, a n overweight GaAs wafer is chosen as solid source and put on top of th e melt. By adjusting the weight of In, epilayers with a lattice mismat ch DELTAa(perpendicular-to)/a below 2 X 10(-4) are obtained. It is fou nd that the quantity of InAs source required is more than that used in single-phase growth and the growth rate is smaller in two-phase growt h. The result is explained using the phase diagram and the theoretical calculation. The growth rate, lattice-mismatch data, and photolumines cence spectra of the epilayers are also presented.