MODELING OF MULTILAYER ION ETCHING PROCESSES

Authors
SHERWIN SJ BAROUCH E KARNIADAKIS GE ORSZAG SA
Citation
Sj. Sherwin et al., MODELING OF MULTILAYER ION ETCHING PROCESSES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1310-1313
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1310 - 1313
Database
ISI
SICI code
1071-1023(1993)11:4<1310:MOMIEP>2.0.ZU;2-X
Abstract
Numerical simulation is used to model ion etching in trilayer lithogra phy. The simulations are capable of capturing the evolution of the bou ndary between two materials as well as the physically observed phoneme na reactive ion etching lag and undercutting. Numerical results are co mpared with experimental data and a good agreement is found except clo se to the material interface where the slope of the surface is large. This error is attributed to a purely energy dependent yield used in th e simulations.