SURFACE STOICHIOMETRY AND INTERFACE FORMATION DURING MOLECULAR-BEAM EPITAXY OF STRAINED INAS ALXGA0.48-XIN0.52AS HETEROSTRUCTURES/

Authors
TOURNIE E PLOOG KH HOHENSTEIN M
Citation
E. Tournie et al., SURFACE STOICHIOMETRY AND INTERFACE FORMATION DURING MOLECULAR-BEAM EPITAXY OF STRAINED INAS ALXGA0.48-XIN0.52AS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1388-1391
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1388 - 1391
Database
ISI
SICI code
1071-1023(1993)11:4<1388:SSAIFD>2.0.ZU;2-X
Abstract
We show that the surface stoichiometry of the film-i.e., cation- or an ion-stable surface-provides a unique means to control the interface fo rmation and sample quality during molecular-beam epitaxy of strained I nAs films buried in an AlxGa0.48-xIn0.52As matrix lattice matched to I nP substrates. When the highly (3.2%) strained InAs films are grown un der As-stable conditions, islanding occurs which leads to defected int erfaces. On the contrary, under In-stable conditions islanding of the InAs films is prevented and high quality strained interfaces are obtai ned.