E. Tournie et al., SURFACE STOICHIOMETRY AND INTERFACE FORMATION DURING MOLECULAR-BEAM EPITAXY OF STRAINED INAS ALXGA0.48-XIN0.52AS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1388-1391
We show that the surface stoichiometry of the film-i.e., cation- or an
ion-stable surface-provides a unique means to control the interface fo
rmation and sample quality during molecular-beam epitaxy of strained I
nAs films buried in an AlxGa0.48-xIn0.52As matrix lattice matched to I
nP substrates. When the highly (3.2%) strained InAs films are grown un
der As-stable conditions, islanding occurs which leads to defected int
erfaces. On the contrary, under In-stable conditions islanding of the
InAs films is prevented and high quality strained interfaces are obtai
ned.