CONTROL OF DEPOSITION RATE IN REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF GEXSI1-X SI HETEROEPITAXIAL FILMS/

The addition of germane and dopant gases significantly alter the growt h kinetics Of low temperature Si epitaxy. Germane, phosphine, and dibo rane have been reported to both enhance and retard film growth rate in various processes. The growth kinetics of remote plasma enhanced chem ical vapor deposition are largely unaffected by the addition of GeH4 o r by in situ doping. Adsorption sites are created by low energy ion bo mbardment and are only minimally dependent on temperature for activati on. Ion-induced gas phase reactions also play an important role in the deposition via formation of precursors which have greater sticking pr obabilities and insertion rates into the hydrogenated surface than for the direct reactions of SiH4 and GeH4 with the Si surface in thermal chemical vapor deposition.