OVERLAYER-INDUCED VALENCE STATES, AND EVIDENCE FOR CHARGE-TRANSFER INNA GAP(110) AND NA/GAAS(110) - A COMPARATIVE PHOTOEMISSION-STUDY/

Authors
EVANS DA LAPEYRE GJ HORN K
Citation
Da. Evans et al., OVERLAYER-INDUCED VALENCE STATES, AND EVIDENCE FOR CHARGE-TRANSFER INNA GAP(110) AND NA/GAAS(110) - A COMPARATIVE PHOTOEMISSION-STUDY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1492-1496
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1492 - 1496
Database
ISI
SICI code
1071-1023(1993)11:4<1492:OVSAEF>2.0.ZU;2-V
Abstract
Core and valence level photoemission experiments for Na overlayers on GaP(110) and GaAs(110) reveal new peaks which are interpreted in terms of Na-Ga charge transfer, as predicted by total energy calculations. New peaks in the region above the valence band are identified with the previously empty Ga surface state which is filled by the charge trans fer process. The role of this gap emission in the pinning of the Fermi level at submonolayer to metallic coverages is discussed for both sem iconductors.