SCANNING-TUNNELING-MICROSCOPY OF DOPING AND COMPOSITIONAL III-V HOMOSTRUCTURES AND HETEROSTRUCTURES

Authors
GWO S CHAO KJ SMITH AR SHIH CK SADRA K STREETMAN BG
Citation
S. Gwo et al., SCANNING-TUNNELING-MICROSCOPY OF DOPING AND COMPOSITIONAL III-V HOMOSTRUCTURES AND HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1509-1513
Citations number
34
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1509 - 1513
Database
ISI
SICI code
1071-1023(1993)11:4<1509:SODACI>2.0.ZU;2-1
Abstract
Scanning tunneling microscopy (STM) was used to study the (110) cross- sectional surfaces of molecular-beam epitaxially grown III-V homo- and heterostructures, which include GaAs multiple p-n junctions, (InGa)As /GaAs strained-layer multiple quantum wells, and (AlGa)As/GaAs heteroj unctions. Both doping and compositional effects can be resolved by the topographic contrasts of constant-current STM images. The samples wer e prepared by either cleaving in ultrahigh vacuum or cleaving ex situ followed by sulfide [(NH4)2S] passivation. Sulfide passivated samples have been found to be advantageous for the measurements of scanning tu nneling spectroscopy.