Rt. Tung, SCHOTTKY-BARRIER HEIGHT - DO WE REALLY UNDERSTAND WHAT WE MEASURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1546-1552
Most measurement techniques of the Schottky barrier height (SBH) conta
in an inherent assumption of homogeneity. The vast majority of electri
cal characteristics experimentally obtained from SB junctions actually
display clear evidence for inhomogeneities, contradicting the concept
of a unique Fermi-level position which is an essential part of Fermi-
level pinning models. It is also shown that many other basic assumptio
ns of the pinning models are not born out by recent theoretical calcul
ations. A large body of experimental data from well-characterized epit
axial metal-semiconductor interfaces has firmly established the critic
al dependence of the SBH on local structure. Thus, understanding the f
ormation of interface structure is likely a prerequisite of any predic
tive SB theory.