P. Soukiassian et al., SB-INDUCED SURFACE STABILIZATION OF INP(100) WAFER BEYOND 500-DEGREES-C, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1603-1608
This article investigates the effect of Sb deposition on the surface t
hermal stability of an InP(100) wafer by core-level and valence-band p
hotoemission spectroscopy using synchrotron radiation. Ion bombardment
of the InP(100) surface removes the native oxides and induces the for
mation of three dimensional indium clusters. After room-temperature Sb
deposition and subsequent thermal annealings, the system undergoes su
rface restructuring which includes removal of the In islands by Sb, es
tablishment of In-Sb bonds and formation of a InSb/InP(100) interface
at 400-degrees-C. This system is found to be stable beyond 500-degrees
-C, i.e., well above the thermal decomposition temperature (370-degree
s-C) of the clean InP(100). In these conditions, P atoms migration fro
m the bulk and their desorption resulting in P depletion layer at the
surface occurs only at higher temperatures around 600-degrees-C.