EXCITON TRANSPORT AND LOCALIZATION IN TYPE-II GAAS ALAS SUPERLATTICES/

Authors
GILLILAND GD WOLFORD DJ BRADLEY JA KLEM J JAROS M
Citation
Gd. Gilliland et al., EXCITON TRANSPORT AND LOCALIZATION IN TYPE-II GAAS ALAS SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1647-1651
Citations number
38
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1647 - 1651
Database
ISI
SICI code
1071-1023(1993)11:4<1647:ETALIT>2.0.ZU;2-V
Abstract
We have measured directly the transport of excitons in a type-II short -period GaAs/AlAs superlattice. We find the transport is laser-power d ependent, and, at low powers or long times, is diffusive. At low power s, we find diffusion constants which increase monotonically from 2 X 1 0(-3) cm2/s at 1.8 K to approximately 7.0 cm2/s at 30 K. Our results c onfirm the existence of exciton localization and thermally activated h opping. Implications of these results are discussed.