OPTICAL-PROPERTIES OF STRAINED-LAYER INXGA1-XSB GASB HETEROSTRUCTURESWITH X-LESS-THAN-OR-EQUAL-TO-0.4/

The optical emission characteristics of strained-layer InGa1-xSb/GaSb quantum well structures have been studied. For the In0.18Ga0.82Sb/GaSb strained-layer quantum well structures with well thicknesses from 5.9 to 15.4 nm, intense and narrow photoluminescence emission was observe d with energies ranging from 0.723 to 0.758 eV. The full width at half -maximum of the emission peaks is of the order of 10 meV. The dependen ce of emission energy on well thickness was compared with the predicti on of a finite square well model, taking into account strain. Good agr eement was obtained for a valence band offset of DELTAE(v)=0.35 DELTAE (g). Temperature dependent photoluminescence measurements were used to verify the band offset parameters. The activation energies measured f rom the temperature dependent photoluminescence measurements were cons istent with the prediction of finite square well model using a valence band offset of DELTAE(v)=0.35DELTAE(g).