The optical emission characteristics of strained-layer InGa1-xSb/GaSb
quantum well structures have been studied. For the In0.18Ga0.82Sb/GaSb
strained-layer quantum well structures with well thicknesses from 5.9
to 15.4 nm, intense and narrow photoluminescence emission was observe
d with energies ranging from 0.723 to 0.758 eV. The full width at half
-maximum of the emission peaks is of the order of 10 meV. The dependen
ce of emission energy on well thickness was compared with the predicti
on of a finite square well model, taking into account strain. Good agr
eement was obtained for a valence band offset of DELTAE(v)=0.35 DELTAE
(g). Temperature dependent photoluminescence measurements were used to
verify the band offset parameters. The activation energies measured f
rom the temperature dependent photoluminescence measurements were cons
istent with the prediction of finite square well model using a valence
band offset of DELTAE(v)=0.35DELTAE(g).