BARRIER MODULATED SEMICONDUCTOR QUANTUM WIRES

Calculations of the electronic states and transition energies of a nov el kind of barrier modulated semiconductor quantum wire have been made by solving the two-dimensional Schrodinger equation numerically. Late rally confined electronic states are found with energy spacings up to 10 meV for wire widths down to 250 angstrom. The results for the trans ition energies are shown to be in good agreement with recent photolumi nescence data for GaAs/InGaAs/GaAs quantum wires using the wire widths measured m scanning electron microscopy. This agreement indicates tha t these wires have negligible optically inactive dead layers and that their electronic and optical properties are well understood.