COMPARISON OF MOBILITY-LIMITING MECHANISMS IN HIGH-MOBILITY SI1-XGEX HETEROSTRUCTURES

Authors
MONROE D XIE YH FITZGERALD EA SILVERMAN PJ WATSON GP
Citation
D. Monroe et al., COMPARISON OF MOBILITY-LIMITING MECHANISMS IN HIGH-MOBILITY SI1-XGEX HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1731-1737
Citations number
30
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1731 - 1737
Database
ISI
SICI code
1071-1023(1993)11:4<1731:COMMIH>2.0.ZU;2-3
Abstract
Relaxed Si1-xGex buffers on Si have yielded record low-temperature mob ilities for both electrons and holes in the Si-Ge system. We analyze v arious limitations on this mobility, including scattering from remote dopants, background impurities, interface roughness, alloy fluctuation s, and the specific strain, morphology, and threading dislocations exp ected for relaxed alloy buffers. Comparison with experiments eliminate s all but the first four as potential limitations on the mobility.