OHMIC CONTACT TO P-ZN(S,SE) USING A PSEUDOGRADED ZN(TE,SE) STRUCTURE

Authors
FAN Y HAN J HE L SARAIE J GUNSHOR RL HAGEROTT M JEON H NURMIKKO AV HUA GC OTSUKA N
Citation
Y. Fan et al., OHMIC CONTACT TO P-ZN(S,SE) USING A PSEUDOGRADED ZN(TE,SE) STRUCTURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1748-1751
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
11
Issue
4
Year of publication
1993
Pages
1748 - 1751
Database
ISI
SICI code
1071-1023(1993)11:4<1748:OCTPUA>2.0.ZU;2-A
Abstract
A low-resistance quasiohmic contact to p-Zn (S,Se) is described which involves the injection of holes from heavily doped p-ZnTe into ZnSe vi a a Zn (Te,Se) pseudograded band pp region. The specific contact resis tance is measured to be in the range of 1.2-2.1 X 10(-3) OMEGA cm2. Th e graded heterostructure contact scheme allows temperature-dependent H all measurements of p-ZnSe, and also has been incorporated as an effec tive injector of holes for a Zn (S,Se)-based diode laser and light emi tting devices, demonstrating the usefulness of the new contact scheme at high current densities.